热处理对电沉积CdSe薄膜光电性能的影响  

Effects of Thermal Treatment on the Photoelectric Properties of Electrodeposited CdSe Films

作　　者：刘东[1] 吴辉煌[1] 张瀛洲 周绍民[2,1] 

机构地区：[1]厦门大学化学系 [2]厦门大学物理化学研究所

出　　处：《厦门大学学报（自然科学版）》1992年第3期251-255,共5页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金

摘　　要：电沉积制备的CdSe薄膜经不同温度退火之后由光电化学测定和x射线衍射实验进行表征,发现随着退火温度的上升,CdSe电极的光电转换效率提高,半导体薄膜中掺杂浓度略有减小,而少子扩散长度明显增大、薄膜中的CdSe微晶呈一定择优取向的六方纤锌矿晶体桔构,且含少量六方晶型的Se,在440℃以下退火时CdSe晶型没有改变,但退火温度升高使其晶粒尺寸增大,同时Se的含量减少,讨论了薄膜光电性能与结晶学性质的关系。The CdSe thin films, prepared by electrodeposition, were thermally annealed at various temperatures, then characterized by means of photoelectrochemical measurements and x-ray diffraction, it was found that as the annealing temperature was elevated,the photoconversion efficiency was improved, correspondingly the donor concentration in the semiconductor films decreased slightly and the minority carrier diffusion length increased significantly. The CdSe crystallites in the films present the hexagonal wurtzite structure in a certain degree of preferred orientation, with a small amount of hexagonal Se crystallites exsisting. At the temperature lower than 440 ℃, annealing does not result in the change of CdSe crystal type, but leads to the increase of the grain size and the decrease of the Se content. The relation between photoelectric and crystallographical properties was discussed.

关 键 词：电沉积 CDSE薄膜 热处理 光电化学 

分 类 号：O484.4[理学—固体物理]