氧化热处理对SrTiO_3基环形压敏电阻电性能的影响  

Effect of Oxidizing-heat-treatment on Properties of SrTiO_3-based Ring Varistors

作　　者：朱建红[1] 江涛[1] 蔡伟[2] 何新华[1] 

机构地区：[1]华南理工大学电子材料与元件系,广东广州510641 [2]信息产业部第五研究所,广东广州510640

出　　处：《电子元件与材料》2004年第1期32-34,共3页Electronic Components And Materials

基　　金：广东省科委"十五"重大科技专项项目(2002A1060304)

摘　　要：研究了氧化热处理对SrTiO3基环形压敏电阻电性能的影响.实验结果表明,压敏电压(V1mA)、电压指数(-)和表观电阻率(-)随温度(600～ 1 100℃)、时间、氧压的增加而上升;电容量(C)、介质损耗(tg-)随之增加而减少;反之,则相反.由复阻抗测试和扩散机制分析认为:氧化热处理的扩散过程主要发生在晶界,电性能的变化决定于晶界扩散和晶界缺陷行为.The effect of different process of oxidizing-heat-treatment on the properties of SrTiO3-based ring varistor is investigated. The results show that varistor voltage (V1mA), nonlinear coefficient (a) and apparent resistance (r) increases but capacitance and dissipation factor decrease when temperature (600 C to 1 100 C), time and the oxygen pressure increase. According to compound impedance tests and diffusion mechanism analysis, the diffusion process of the oxidizing-heat-treatment mainly occurs in the crystal boundary and the changes of the electrical properties depend on the diffusion and the behaviors of the crystal boundary defects.

关 键 词：钛酸锶基瓷 氧化热处理 晶界缺陷行为 

分 类 号：TQ174.1[化学工程—陶瓷工业]