Hetero-epitaxy of L_g= 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications  

作　　者：黄杰 黎明 赵倩 顾雯雯 刘纪美 

机构地区：[1]College of Engineering and Technology, Southwest University [2]Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology [3]School of Physical Science and Technology, Southwest University

出　　处：《Chinese Physics B》2015年第8期529-533,共5页中国物理B（英文版）

基　　金：supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401373);the Fundamental Research Funds for Central University,China(Grant Nos.XDJK2013B004 and 2362014XK13);the Chongqing Natural Science Foundation,China(Grant No.cstc2014jcyj A40038)

摘　　要：In this work, a hetero-epitaxial Al0.49In0.51As/Ga0.47In0.53 As metamorphic high electron mobility transistor(mHEMT) grown by metal–organic chemical vapor deposition(MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/Al As period multiple quantum well(MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the twodimensional electron gas(2DEG) is larger than 7800 cm2/V·s, with an average sheet carrier density of 4.6×1012cm-2.Two-stage electron beam(EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm m HEMT device on Si substrate. A maximum transconductance Gm of up to 854 mS/mm is achieved, and is comparable to that of m HEMT technology on Ga As substrate with the same dimension. The fTand fmax are 135 GHz and120 GHz, respectively.In this work, a hetero-epitaxial Al0.49In0.51As/Ga0.47In0.53 As metamorphic high electron mobility transistor(mHEMT) grown by metal–organic chemical vapor deposition(MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/Al As period multiple quantum well(MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the twodimensional electron gas(2DEG) is larger than 7800 cm2/V·s, with an average sheet carrier density of 4.6×1012cm-2.Two-stage electron beam(EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm m HEMT device on Si substrate. A maximum transconductance Gm of up to 854 mS/mm is achieved, and is comparable to that of m HEMT technology on Ga As substrate with the same dimension. The fTand fmax are 135 GHz and120 GHz, respectively.

关 键 词：AlInAs/GaInAs silicon metamorphic high electron mobility transistor(mHEMT) metal-organic chemical vapor deposition(MOCVD) multip 

分 类 号：TN386[电子电信—物理电子学]