Review of deep ultraviolet photodetector based on gallium oxide  

作　　者：Yuan Qin Shibing Long Hang Dong Qiming He Guangzhong Jian Ying Zhang Xiaohu Hou Pengju Tan Zhongfang Zhang Hangbing Lv Qi Liu Ming Liu 覃愿;龙世兵;董航;何启鸣;菅光忠;张颖;侯小虎;谭鹏举;张中方;吕杭炳;刘琦;刘明(Key Laboratory of Microelectronics Devices&Integration Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Key Laboratory of Microelectronics Devices&Integration Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China [3]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2019年第1期126-142,共17页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61521064,61522408,61574169,61334007,61474136,and 61574166);the Ministry of Science and Technology of China(Grant Nos.2018YFB0406504,2016YFA0201803,2016YFA0203800,and 2017YFB0405603);the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-JSC048 and QYZDY-SSW-JSC001);the Beijing Municipal Science and Technology Project,China(Grant No.Z171100002017011)

摘　　要：Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.

关 键 词：GALLIUM OXIDE ultrawide bandgap ultraviolet(UV) PHOTODETECTOR 

分 类 号：TN15[电子电信—物理电子学]