低频功率放大器的可靠性设计  

Reliability Design for Low Frequence Power Amplifiers

作　　者：程正务[1] 程大蓓 

机构地区：[1]江南大学通信与控制工程学院,江苏无锡214036 [2]无锡市供电公司,江苏无锡214061

出　　处：《江南大学学报（自然科学版）》2003年第5期483-486,共4页Joural of Jiangnan University (Natural Science Edition)　

摘　　要：从三极管放大器交流负载线的物理意义出发,通过数学证明,提出了一个对研究功率放大器有指导意义的定理,并在此定理基础上给出甲类、乙类功率放大器设计的新思路,特别指出了现有各种书籍按PCM≥0 2Pom标准选择乙类功放管不合理的关键所在,重新推导出了PCM≥0 5Pom的稳妥的新标准 实践证明,按文中方法设计的功率放大器在获得准最大功率情况下。In view of the physical significance of alternating load line for transistor amplifiers, we develop a new theorem which is useful to power amplifiers design based on mathematical demonstration. On the basis of the theorem, the paper puts forward a new idea and point outs the reasonless standard in which we select transistors for class B amplifiers and use P_(CM)≥0.5 P_(om) as a substitute for P_(CM)≥0.2 P_(om). The application results prove that according to this new design of power amplifiers, the service reliability for transistors achieves great improvement .

关 键 词：甲类放大器 乙类放大器 交流负载线 功耗线 二次击穿临界线 

分 类 号：TN710.2[电子电信—电路与系统]