高导热Si_3N_4陶瓷基片材料的制备研究  

Preparation of High Thermal Conductivity Si_3N_4 Ceramic Substrates

作　　者：张景贤[1] 段于森 江东亮[1] 陈忠明[1] 刘学建[1] 黄政仁[1] 杨建[2] 李晓云[2] 丘泰[2] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050 [2]南京工业大学材料科学与工程学院,江苏南京210009

出　　处：《真空电子技术》2016年第5期7-10,共4页Vacuum Electronics

基　　金：国家自然科学基金(51572277);高性能陶瓷和超微结构国家重点实验室的资助

摘　　要：采用高纯Si粉作为起始原料,通过流延成型、氮化和气压烧结工艺制备高导热氮化硅陶瓷基片。通过优化分散剂、粘结剂和塑性剂的含量以及流延工艺过程,制备出厚度可控的Si膜。进一步氮化得到微结构均匀的氮化硅素坯。通过气压烧结制备出氮化硅陶瓷基片,热导率达到76 W/m·K。Si_3N_4 circuit substrates were prepared through tape casting,nitridation and gas-pressure-sintering.Initially,high quality Si tapes were prepared through the optimization of tape casting composition(the dispersant,binder and plasticizer)and processing parameters.After binder removal,nitridation was conducted to convert the Si tape into Si_3N_4.Finally,the tapes were gas-pressure-sintered at 1850 ℃ with1 hholding,and so Si_3N_4 substrates with a thermal conductivity of 76 W/m·K were obtained.

关 键 词：氮化硅基片 流延成型 硅粉氮化 气压烧结 

分 类 号：TQ174.1[化学工程—陶瓷工业]