State diagram of spin-torque oscillator with perpendicular reference layer and planar field generation layer  

作　　者：Mengwei Zhang Longze Wang Dan Wei Kaizhong Gao 

机构地区：[1]Key Lab of Advanced Materials,School of Materials Science and Engineering,Tsinghua University [2]Advanced Technology Development,Seagate Technology

出　　处：《Progress in Natural Science:Materials International》2015年第3期258-262,共5页自然科学进展·国际材料（英文版）

基　　金：support of ASTC project, and NSFC (Grant nos. 51171086 and 51371101, respectively)

摘　　要：The state diagram of spin-torque oscillator(STO) with perpendicular reference layer(REF) and planar field generation layer(FGL) was studied by a macrospin model and a micro-magnetic model. The state diagrams are calculated versus the current density, external field and external field angle. It was found that the oscillation in FGL could be controlled by current density combined with external field so as to achieve a wide frequency range. An optimized current and applied field region was given for microwave assisted magnetic recording(MAMR), considering both frequency and output field oscillation amplitude. The results of the macro-spin model were compared with those of the micro-magnetic model. The macro-spin model was qualitatively different from micro-magnetics and experimental results when the current density was large and the FGL was non-uniform.The state diagram of spin-torque oscillator(STO) with perpendicular reference layer(REF) and planar field generation layer(FGL) was studied by a macrospin model and a micro-magnetic model. The state diagrams are calculated versus the current density, external field and external field angle. It was found that the oscillation in FGL could be controlled by current density combined with external field so as to achieve a wide frequency range. An optimized current and applied field region was given for microwave assisted magnetic recording(MAMR), considering both frequency and output field oscillation amplitude. The results of the macro-spin model were compared with those of the micro-magnetic model. The macro-spin model was qualitatively different from micro-magnetics and experimental results when the current density was large and the FGL was non-uniform.

关 键 词：SPIN-TORQUE OSCILLATOR MICROMAGNETIC Macrospin EXTERNAL field MAMR 

分 类 号：TN752[电子电信—电路与系统]