Magnetoelectric Bi_(3.15)Nd_(0.85)Ti_3O_(12)–NiFe_2O_4 bilayer films derived by a SOL–GEL method  

作　　者：Feng Yang Fuwei Zhang Cuifang Dong Minghua Tang 

机构地区：[1]School of Materials Science and Engineering,University of Jinan [2]Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials,University of Jinan [3]Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education(Xiangtan University)

出　　处：《Progress in Natural Science:Materials International》2015年第4期361-364,共4页自然科学进展·国际材料（英文版）

基　　金：supported by funding from National Natural Science Foundation of China (Nos. 11104116, 50972049, 51172094 and 51072171);the Outstanding Young Scientists Foundation Grant of Shandong Province (No. BS2011CL003);973 Program (Grant no. 2012CB326404);the Doctoral Foundation of University of Jinan, China (No. 161220)

摘　　要：Magnetoelectric Bi3.15Nd0.85Ti3O12–NiFe2O4(BNT–NFO) bilayer films were deposited on Pt/Ti/SiO2/Si(100) substrates by a simple SOL–GEL method and spin-coating process with different growth sequences of BNT and NFO yielding the following layered structures: BNT/NFO/substrate(BNS) and NFO/BNT/substrate(NBS). Such heterostructures present simultaneously strong ferroelectric and ferromagnetic responses,as well as magnetoelectric effects at room temperature. BNS thinfilms showed larger ME voltage coefficient than NBS films, revealing that the layer sequences have a significant in fluence on the magnetoelectric coupling behavior of these bilayer structures, which may be caused by a interfacial effect.Magnetoelectric Bi3.15Nd0.85Ti3O12–NiFe2O4(BNT–NFO) bilayer films were deposited on Pt/Ti/SiO2/Si(100) substrates by a simple SOL–GEL method and spin-coating process with different growth sequences of BNT and NFO yielding the following layered structures: BNT/NFO/substrate(BNS) and NFO/BNT/substrate(NBS). Such heterostructures present simultaneously strong ferroelectric and ferromagnetic responses,as well as magnetoelectric effects at room temperature. BNS thinfilms showed larger ME voltage coefficient than NBS films, revealing that the layer sequences have a significant in fluence on the magnetoelectric coupling behavior of these bilayer structures, which may be caused by a interfacial effect.

关 键 词：MAGNETOELECTRIC FERROELECTRIC Magnetic DEPOSITION 

分 类 号：O482.5[理学—固体物理]