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作 者:麻晓琴 周璇 王耀功[1,2] 杨静远 张小宁 Ma Xiaoqin;Zhou Xuan;Wang Yaogong;Yang Jingyuan;Zhang Xiaoning(Key Laboratory of Physical Electronics and Devices of the Ministry of Education,Xi’an Jiaotong University,Xi’an 710049,China;School of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China;Nuclear and Radiation Safety Center,Beijing 100082,China)
机构地区:[1]西安交通大学电子物理与器件教育部重点实验室,西安710049 [2]西安交通大学电子与信息工程学院,西安710049 [3]生态环境部核与辐射安全中心,北京100082
出 处:《真空科学与技术学报》2019年第9期759-766,共8页Chinese Journal of Vacuum Science and Technology
基 金:国家自然科学基金项目(批准号:51807156,61771382);陕西省国际合作计划项目(批准号:2018KW-034);中国博士后科学基金面上项目(批准号:2017M623174)
摘 要:本文设计制作了基于铝基衬底的微沟道阵列器件,并研究了纳秒脉冲微沟道等离子体放电特性。通过调控纳秒脉冲输出波形,获得了脉冲参数对微沟道等离子体放电特性的影响规律。结果表明,相比于传统的正弦波驱动,纳秒脉冲微沟道等离子体放电更集中,耦合效应更明显,且等离子体特性更易于调控。当改变脉冲参数时,6%左右的波形过冲电压会造成微沟道等离子体放电强度~30%的改变。另外,脉冲上升沿时间越短,放电强度越高,当上升沿时间由152 ns缩短至32 ns时,放电强度可提升~30%。A novel type of microchannel array device was fabricated on aluminum substrate and the discharge characteristics of the microchannel plasma driven by bipolar nanosecond(ns)pulse were investigated.The plasma discharge driven by bipolar ns-pulse outperforms that driven by sinusoidal waveform,because of a higher concentration,a more obvious coupling and a more easiness to control.The influence of the overshoot voltage and pulse rising time of bipolar ns-pulse properties on the micro-plasma behavior was evaluated.The preliminary results show that the properties of bipolar ns-pulse have a major impact.To be specific,an overshoot voltage of 6%produced a change by 30%of the microchannel plasma discharge intensity.In addition,a decrease of the rising time,from 152 ns to 32 ns,increased the plasma discharge intensity by 30%.
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