Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates  

沉积参数对WC-Co基体内孔HFCVD金刚石薄膜生长的影响（英文）

作　　者：王新昶[1] 林子超[1] 沈彬[1] 孙方宏[1] 

机构地区：[1]上海交通大学机械与动力工程学院,上海200240

出　　处：《Transactions of Nonferrous Metals Society of China》2015年第3期791-802,共12页中国有色金属学报（英文版）

基　　金：Projects(51275302,51005154)supported by the National Natural Science Foundation of China

摘　　要：Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min.在内孔HFCVD金刚石薄膜沉积过程中,沉积温度(t)、碳源浓度(φ)、总反应压力(ρ)和气体总流量(F)等沉积参数对金刚石薄膜的生长具有显著影响。采用Taguchi方法系统研究这4个关键参数对内孔HFCVD金刚石薄膜性能的综合影响,并且通过自定义的品质因数(figure-of-merit,FOM)评价金刚石薄膜的综合性能。沉积温度、碳源浓度和总反应压力对于内孔HFCVD金刚石薄膜的各项性能及FOM均存在显著影响,并且与平片或外表面沉积存在一定的差异。根据上述影响性分析的结果,以获得最佳的内孔HFCVD金刚石薄膜综合性能为优化目标所确定的最优化沉积参数为:t=830℃,φ=4.5%,ρ=4000 Pa,F=800 mL/min。

关 键 词：hot filament chemical vapor deposition diamond film inner hole surface Taguchi method deposition parameter optimization 

分 类 号：TB383.2[一般工业技术—材料科学与工程]