ZnO-MoO_3添加(Zr_(0.8)Sn_(0.2))TiO_4微波陶瓷的介电性能  

Dielectric Properties of (Zr_(0.8)Sn_(0.2))TiO_4 Microwave Ceramics with ZnO and MoO_3 Addition

作　　者：石勇[1] 靳正国[1] 程志捷[1] 靳春颖[1] 

机构地区：[1]天津大学材料科学与工程学院先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《天津大学学报（自然科学与工程技术版）》2004年第2期130-134,共5页Journal of Tianjin University：Science and Technology

摘　　要：微波电路的小型化、集成化和高可靠性对微波陶瓷提出了特殊的要求.作者在(Zr0.8Sn0.2)TiO4主相系统中,单一添加ZnO或复合添加ZnO MoO,考察了不同含量的上述改性添加剂对Zr0.8Sn0.2TiO4陶瓷显微结构和微波介电性能的影响.主相合成条件为1100℃下3h;粉碎、成型后样品在1240℃～1400℃下3h烧成.在1GHz下用谐振腔法测量了材料的介电常数和Qf值,并在1M下测量了频率温度系数τf.采用SEM对样品进行形貌观察及能谱分析,并进行了XRD表征.研究结果表明,单独添加少量的ZnO(1%)可以降低烧结温度,但Qf值较低,与复合添加样品的显微结构相比晶粒不均匀.复合添加MoO3(0.25%)和ZnO(1%)的(Zr0.8Sn0.2)TiO4陶瓷Qf值由49430GHz提高到61210GHz,同时介电常数εr和谐振频率温度系数τf基本保持不变.The effects of ZnO and ZnO-MoO_3 additions on the microstructures and the microwave dielectric properties of (Zr_(0.8)Sn_(0.2))TiO_4 ceramics have been investigated.Zr_(0.8)Sn_(0.2)TiO_4 powders doping with different levels of ZnO and MoO were synthesized at 1 100 ℃ for 3 h and the synthesized powders were pluverized and pressed into pellets,which were then sintered at 1 240 ℃～1 400 ℃ for 3 h.The dielectric constant and the quality factor Q_f were measured at 1 GHz using resonance cavity method.The temperature coefficients of resonant frequency τ_f were further measured at 1 MHz.The microstructure observation and EDAX analysis of the sintered samples surfaces were performed by means of scanning electron microscopy(SEM).The crystalline phases were (identified by) X-ray diffraction(XRD)patterns.It was found that low-level ZnO(1%)addition can reduce the (firing) temperature,but the Q_f values is lower and the microstructure shows asymmetric grain size compared with that of samples doped by MoO_3-ZnO. The results also showed that the quality factor Q_f can be significantly (improved) from 49 430 GHz to 61 210 GHz in (Zr_(0.8)Sn_(0.2))TiO_4 ceramics containing MoO_3 (0.25%)-ZnO((1%),while) the dielectric constant ε_r and τ_f were not affected.

关 键 词：微波陶瓷 品质因数 介电性能 ZnO-MoO 改性添加剂 

分 类 号：TQ174.756[化学工程—陶瓷工业]