陶瓷真空室镀膜工艺改进及脉冲磁场时间特性测量  

Coating technology improvement of ceramic chamber and measurement of time characteristic of pulsed magnetic field

作　　者：尚雷[1] 王相綦[1] 蒋道满[1] 王琳[1] 赵枫[1] 冯光耀[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,安徽合肥230029

出　　处：《强激光与粒子束》2004年第3期395-398,共4页High Power Laser and Particle Beams

基　　金：国家重大科学工程"国家同步辐射实验室二期工程"项目资助课题

摘　　要：　介绍了合肥光源二期工程注入段陶瓷真空室的改进情况,采用新的镀膜技术,大大改善了脉冲磁场的延时特性,减少了储存环注入时的轨道扰动,提高了注入束流累积效速率。改进了原来的点线圈磁场测量方法,采用带有积分电路及抗干扰措施的双线圈测量装置测量了真空室内的脉冲磁场延时特性,使脉冲磁场延时误差测量的分辨率达到ns量级,给出了测量结果。Improvement status of HLS ceramic chambers was presented. A new method of inner surface coating of ceramic chambers with Mo-metallization was developed. The rise time characteristic of the pulsed magnetic field was greatly improved. Injection rate of the storage ring increased after installation of the new chamber. A two-coil method of measuring magnetic field was established. The resolution of rise time reaches nano-second range and the waveforms of measurement were presented. .

关 键 词：陶瓷真空室 镀膜 脉冲磁场 延时 扰动 注入效率 

分 类 号：TL503.3[核科学技术—核技术及应用]