Calculation of Ge_(0.5)Si_(0.5)—Si Superlattice Photodetectors on Ge_(0.05)Si_(0.95) Waveguides:The Optimum Parameters  

Calculation of Ge_0.5Si_0.5 - Si Superlattice Photodetectorson GE_0.05Si_0. 95 Waveguides: The Optimum Parameters①

作　　者：XU Xuelin, LI Na, LIU Enke(Xi’an Jiaotong University, Xi’an 710049, CHN ) 

出　　处：《Semiconductor Photonics and Technology》1997年第1期3-6,共4页半导体光子学与技术（英文版）

摘　　要：Abstract: The optimum parameters are calculated by the large cross - section theory and mode cut - off equation. The effect on reverse bias voltage is analysed by the doping concentration in n+ - Si. This is significant because the reverse bias increases sharply when the doped concentration in n+ - Si is less than 1 x 10~20 cm-3.The optimum parameters are calculated by the large cross-section theory and mode cut-off equation.The effect on reverse bias voltages in analysed by the doping concentration in n^+-Si.The is significant because the reverse bias increases sharply when the doped concentration in n^+-Si is less than 1×10^20cm^-3.

关 键 词：Characteristics GeSi Material PHOTODETECTORS WAVEGUIDES 

分 类 号：TN304.24[电子电信—物理电子学]