镧离子注入对纯锆抗高温氧化性能的影响  

Influence of Implanted Lanthanum Ions on High-Temperature Oxidation Resistance of Zirconium

作　　者：彭德全[1] 白新德[1] 周庆钢[1] 陈小文[1] 余任泓[1] 刘晓阳[1] 

机构地区：[1]清华大学,北京100084

出　　处：《稀有金属材料与工程》2004年第2期136-139,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(G2000067207-1)

摘　　要：对纯锆表面注入了1×10^(16)ions/cm^2～1×10^(17)ions/cm^2的镧离子,并在500℃条件下进行了空气氧化增重研究。用XPS分析了注入的镧、锆的价态;用AES分析了镧锆氧三元素的深度分布;用0.3°小角X光掠射(GAXRD)分析了高温氧化时氧化锆的相转变。结果表明,纯锆表面注入La离子后,其抗高温氧化性能显著提高,且注入剂量越大效果越强,注入氧化膜以La_2O_3和ZrO_22种形式存在;由于La离子的注入,促使形成大量四方相氧化锆(t-ZrO_2),而且减少四方相氧化锆(t-ZrO_2)向单斜相氧化锆(m-ZrO_2)的转变,这是纯锆氧化速率降低的根本原因。In order to study the influence of lanthanum ion implantation on the oxidation behavior, zirconium specimens were implanted at a dose range from 1 X 10(16) ions/cm(2) to 1 X 10(17) ions/cm(2) using MAVVA source at extracted voltage of 40 kV. The weigh gains curves were achieved after oxidized in air at 500degreesC for 100 min, which noted a significant improvement on oxidation resistance compared with unimplanted specimens. The valence of the oxides in the scale was analyzed by X-ray photoemission spectroscopy (XPS); and then the depth profile of the element in the surface of the samples was achieved by Auger Electron spectroscopy (AES). Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the lanthanum ion implantation in the oxide films. It was clearly found that the lanthanum implantation changed the phase in the scale from monoclinic zirconium to tetragonal zirconia. Finally, the mechanism of the improvement on oxidation was discussed.

关 键 词：纯锆 高温氧化 镧离子注入 相转变 

分 类 号：TG174[金属学及工艺—金属表面处理]