脉冲直流PCVD制备Ti(C,N)薄膜及其组织结构分析  

Microstructure of Ti(C,N) Films Coated by Pulsed-d.c PCVD

作　　者：王昕[1] 马大衍[1] 马胜利[1] 徐可为[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,陕西西安710049

出　　处：《稀有金属材料与工程》2004年第2期204-206,共3页Rare Metal Materials and Engineering

基　　金：国家"863"计划资助项目(2001AA883010)

摘　　要：用工业型脉冲直流等离子体化学气相沉积(PCVD)设备,针对不同混合气体CH_4所占比例,在H13模具钢表面沉积了Ti(C,N)薄膜。用SEM观察薄膜断口形貌,用XRD及XPS分析薄膜相组成和价态。结果表明:一定量碳元素的加入,抑制了TiN薄膜中柱状晶的生长,并且阻止了TiN晶粒的长大。Ti(C,N)的相结构可能为TiN和TiC两相混合,但在C(或N)含量较低的膜层中,C(或N)原子也会以置换的方式存在于TiN(或TiC)单相组织中。Using pulsed DC plasma chemical vapor deposition technology, the Ti(C, N) films on H13 steel were prepared under different CH4 atmospheres. The cross-sections of the Ti(C,N) films were investigated by SEM, and the elements in the film were characterized by XRD and XPS The results show that addition of C to TiN film prevents the growth of TiN grains and development of column structure. The Ti(C, N) can be composed of two phases of TiN and phase TiC.

关 键 词：PCVD TI(C N) 相结构 

分 类 号：TB43[一般工业技术]