氖等电子序列2p^5(~2P)nd系列的高激发态结构  

THE HIGHLY-EXCITED STATE STRUCTURE OF 2p^5(~2P)nd RYDBERG SERIRS POR THE NEON ISOELECTRONIC SEQUENCE

作　　者：刘波[1] 钱兴中[1] 王治文[1] 

机构地区：[1]吉林大学原子与分子物理研究所

出　　处：《原子与分子物理学报》1992年第4期2514-2520,共7页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金;国家教委博士点基金

摘　　要：本文用本征通道量子亏损理论方法(EQDT)计算了氖等电子序列2P^5(~2P)nd里德伯系列的激发态结构。得到基本结构参量(EQDT参量)随有效核电荷增大的变化规律并从静电相互作用与自旋—轨道相互作用之间的竞争的角度给出明确的物理解释。以NeⅠ为实例,给出其高激发态结构的具体数值结果。In this paper, by using the eigenchannel quantum defect theory (EQDT) we calculate the highly-excited state structure of 2p5(2P)nd Rydberg series for the neon isoelectronic sequence, we obtain the basic structure parameters (EQDT parameters) as functions of the effective nuelear charge. Their behaviours can be interpreted in terms of the competition between electrostatic and spin-orbit interactions along the sequence. As a numerical example, we give all Rydberg energy levels and their channel mixing coefficients of Ne I 2p5(2P)nd configuration with the structure paramers as input,

关 键 词：等电子序列 激发态 氖 量子亏损 

分 类 号：O562.4[理学—原子与分子物理]