单畴的单原子In纳米线阵列的制备与研究  

Growth of single domain monatomic In chain arrays on vicinal Si(001) surface

作　　者：窦瑞芬[1] 贾金锋[1] 徐茂杰[1] 潘明虎[1] 何珂[1] 张丽娟[1] 薛其坤[1] 

机构地区：[1]中国科学院物理研究所表面物理国家重点实验室,北京100080

出　　处：《物理学报》2004年第3期871-876,共6页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :60 0 2 14 0 3 );国家科学技术部基金 (批准号 :10 13 40 3 0 )资助的课题~~

摘　　要：利用Si(0 0 1)向 [110 ]方向偏 4°角的斜切表面作为衬底 ,成功地制备了分布均匀的单畴的单原子In链阵列 .扫描隧道显微镜分析表明 ,沉积的In原子优先吸附在台面上沿着台阶内边缘的位置 ,并在两个Si的二聚体链之间形成稳定的In二聚体 .In二聚体组成直的单原子链 ,其生长机理与Car提出的“表面聚合反应”相一致 .另外 。Using a vicinal Si(001) surface with 4°miscut along [110] direction as a substrate, we have fabricated single-domain monatomic In chain arrays on a large scale. High-resolution scanning tunneling microscopic images reveal that the deposited In atoms preferentially form In dimers between the two neighboring Si dimer rows on the lower terrace along the step edge, due to the high coordination of these positions. Indium dimers remove dangling bonds of the Si dimers and saturate all In valency,and then develop into a long monatomic In chain along the step edge. It is worth highlighting that the ordered narrow terrace and the straight D B steps edge are key to the formation of the monatomic In chains.

关 键 词：铟单原子链 硅邻近面 扫描隧道显微镜 纳米材料 二聚体 表面聚合反应 

分 类 号：TB383[一般工业技术—材料科学与工程]