Temperature characteristics of electrical behavior of W-Bi-Ti-O ceramics at low field  

作　　者：CHENMin LIUZuli WANGChuancong WANGYu YANGXinsheng YAOKailun 

机构地区：[1]DepartmentofPhysics,HuazhongUniversityofScienceandTechnology,Wuhan430074,China [2]NationalLaboratoryofSolidStateMicrostructures,NanjingUniversity,Nanjing210008,China

出　　处：《Chinese Science Bulletin》2004年第4期313-316,共4页

摘　　要：Bi2WTi3O12 ceramics are fabricated by the conventional solid-state reaction process. With increasing temperature the sample first has metallic behavior, then strong electrical fluctuations above 100℃, and finally exhib-its stable nonlinear properties characterized by semiconduc-tivity above 300℃ at low field (E ≤ 100 V/mm). The Ar-rhenius law for electrical conductivity by thermal activation is not suitable to explain the anomalous results. XRD analysis reveals that Bi2WO6 is the main phase and Bi4Ti3O12 is the second phase. Based on the phase transition of tungsten tri-oxide from room temperature to about 300℃, the electrical properties of Bi2WTi3O12 ceramics can be explained.Bi2WTi3O12 ceramics are fabricated by the conventional solid-state reaction process. With increasing temperature the sample first has metallic behavior, then strong electrical fluctuations above 100℃, and finally exhib-its stable nonlinear properties characterized by semiconduc-tivity above 300℃ at low field (E ≤ 100 V/mm). The Ar-rhenius law for electrical conductivity by thermal activation is not suitable to explain the anomalous results. XRD analysis reveals that Bi2WO6 is the main phase and Bi4Ti3O12 is the second phase. Based on the phase transition of tungsten tri-oxide from room temperature to about 300℃, the electrical properties of Bi2WTi3O12 ceramics can be explained.

关 键 词：温度特征 Bi2WTi3O12陶瓷材料 Arrhenius定律 铋 钛 钨 

分 类 号：TQ174.758[化学工程—陶瓷工业]