Ni_(80)Fe_(20)/Al_2O_3/Ni_(80)Fe_(20)磁性隧道结中间绝缘层同TMR关系的研究  

RESEARCH ON RELATIONSHIP BETWEEN INSULATING BARRIER AND TMR OF Ni_(80)Fe_(20)/Al_2O_3/Ni_(80)Fe_(20) MAGNETIC TUNNEL JUNCTION

作　　者：程遥[1] 徐小龙[1] 李燕飞[1] 

机构地区：[1]哈尔滨理工大学

出　　处：《哈尔滨师范大学自然科学学报》2004年第1期38-40,共3页Natural Science Journal of Harbin Normal University

基　　金：国家自然科学基金(批准号 :90 2 0 70 14 );黑龙江省自然科学基金资助(F0 1-2 1)

摘　　要：采用离子束和磁控溅射技术制备了Ni80 Fe2 0 /Al2 O3/Ni80 Fe2 0 磁性隧道结样品 ,主要研究了中间绝缘层对隧道结磁电阻效应的影响 .结果表明 ,中间氧化物的厚度对磁电阻值起调节作用 ,在 3～ 7nm范围内磁电阻基本呈现单调递减现象 .The samples of the Ni 80 Fe 20/Al 2O 3/Ni 80 Fe 20 magnetic tunnel junction were prepared with the ion beam sputtering and magnetron sputtering technique. The analysis of The relationship between TMR and insulating barrier. The result shows that TMR value decreases progressively with the increase of thickness of insulating barrier within 3 to 7nm. It offers a try for developing the performance of the magnetic tunneling junction on the experiment.

关 键 词：磁性隧道结 隧道磁电阻 磁控溅射 绝缘层 TMR 离子束 磁性存储器件 

分 类 号：O482.5[理学—固体物理] TP333.3[理学—物理]