在多工位炉上CeO_2:Bi_(12)SiO_(20)单晶生长的研究(Ⅱ)——空间生长实验部分  

Growth of CeO_2:Bi_12SiO_20 Crystals in Multi-Position Furnace(Ⅱ)- Space Growth Experiment

作　　者：周燕飞[1] 王锦昌[1] 唐连安[1] 陈诺夫[2] 陈万春[3] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050 [2]中国科学院半导体研究所,北京100083 [3]中国科学院物理研究所,北京100080

出　　处：《无机材料学报》2004年第2期283-288,共6页Journal of Inorganic Materials

摘　　要：掺Ce:Bi12SiO20单晶在神舟3号(SZ-3)飞船上成功地进行了空间生长,得到晶体尺寸为(?)10mm×40mm.将空间生长的晶体和地面生长晶体对比发现:空间生长晶体的外观同地面生长晶体有明显差异.分析测试空间和地面晶体的X射线摇摆曲线、吸收曲线和喇曼光谱,结果表明:空间生长掺Ce:BSO晶体的结构完整性优于地面生长的晶体。Ce-doped Bi12SiO20 single crystal with size of (?)10mm×40mm was successfully grown in space on board of the spacecraft Shenzhou No.3. The surface morphology of space-grown crystal is different from that of ground-grown crystal.The space- and ground-grown crystals were measured by X-ray rocking curves, absorption spectra and micro-Raman spectra. The results show that the quality of Ce-doped crystal grown in space is better than that of the ground-grown one. The effect of doping on optical properties of BSO grown in space is evident in comparison with the ground-grown crystal.

关 键 词：CeO2:Bi12SiO20晶体 掺铈硅酸铋 晶体生长 微重力 多工位炉 喇曼光谱 光学性能 空间生长实验 

分 类 号：O781[理学—晶体学]