钛酸钡中的硼间隙及其对PTCR效应的影响  

Boron Interstitial in BaTiO_3 and Its Influence on PTCR Effect

作　　者：齐建全[1] 李龙土[1] 桂治轮[1] 

机构地区：[1]清华大学,北京100084

出　　处：《稀有金属材料与工程》2004年第3期251-253,共3页Rare Metal Materials and Engineering

基　　金：国家"863"计划(2001AA325010);国家自然基金资助(59995523)

摘　　要：通过B2O3蒸汽掺杂,钛酸钡晶胞膨胀,表明硼离子可以进入钛酸钡晶格中形成硼间隙。B2O3蒸汽掺杂使含Y钛酸钡陶瓷室温电阻率下降,升阻比提高。同样的烧结条件下,钛酸钡陶瓷的PTCR效应随B2O3蒸汽掺杂源的浓度升高而升高。硼间隙和/或相关缺陷络合物可以形成电子捕获中心,从而提高PTCR效应。Vapor doping affects the PTCR effect in BaTiO3 ceramics distinctly. Doping B2O3 vapor in BaTiO3 results in the expanding of the grain lattice cell. Thus, boron interstitial may get into BaTiO3 grain lattice. The room temperature resistance of Y-BaTiO3 decreases and the PTCR effect increases distinctly through the doping of B2O3 vapor. Given the same sintering condition, doping with higher level of the vapor B2O3 source results in the higher PTCR effect. The interstitial boron ion and/or its complex can act as trap center and enhance the PTCR effect of the ceramics.

关 键 词：钛酸钡陶瓷 BATIO3 硼间隙 PTCR效应 蒸汽掺杂 室温电阻率 

分 类 号：TN304[电子电信—物理电子学]