电子束法沉积ZnIn_2Se_4膜的结构与XPS表征  

THE STRUCTURE AND XPS CHARACTERIZATION OF THE ZnIn_2Se_4 FILMS BY ELECTRON BEAM DEPOSITION

作　　者：张瑞峰[1] 于亚莉[1] 孙玉茹[1] 李文范[1] 

机构地区：[1]中国科学院长春应用化学研究所国家电化学与光谱分析研究中心,长春市130022

出　　处：《真空科学与技术》1992年第1期32-36,共5页Vacuum Science and Technology

摘　　要：研究了电子束法沉积ZnIn_2Se_4薄膜的工艺条件,所得致密、均匀膜的导电类型可以通过不同气氛处理得到控制。该膜的最佳参数为:电阻率ρ为2.35×10^(-1)Ω·cm,Hall迁移率μ_H为106cm^2·V^(-1)·S^(-1),载流子浓度N是1.51×10^(17)cm^(-3),禁带宽度E_(?)为2.23eV。采用XPS技术研究了膜的组成、结构、价态。The ZnIn_2Se_4 thin film were prepared by electron beam deposition. The composition,structure,and valence state of the films were investigated by XPS and X-ray diffraction. It showed that ρ=2.35×10^(-1)Ω·cm,μ_H=106cm^2·V^(-1)·S^(-1), N=1.51×10^(17) cm^(-3), E_(?)=2.23eV. The dependence of the spraying parameters on the properties of the films was examined. The hetero junction n-ZnIn_2Se_4/p-Si solar cells were fabricated successfully for the first time.

关 键 词：薄膜 电子束沉积 结构 ZnIn2Se4 

分 类 号：O484.1[理学—固体物理]