钇锰离子共掺杂对Ni内电极MLCC介电性能的影响  

Effects of Y_2O_3 and MnCO_3 Co-doping on Dielectric Properties of MLCC with Ni Internal Electrode

作　　者：陈彩虹[1] 钟建薇 赖永雄 李基森 吴建青[2] 

机构地区：[1]广东风华高新科技股份有限公司,广东肇庆526020 [2]华南理工大学材料学院,广东广州510640

出　　处：《电子元件与材料》2004年第4期8-10,24,共4页Electronic Components And Materials

基　　金：国家十五高技术研究发展计划("863"计划)资助项目(2001AA325010)

摘　　要：对具有Y5V特性的BCTZ系抗还原介质材料进行了施主离子(Y3+)和受主离子(Mn2+)共掺杂。以该电介质制备出多层陶瓷电容器,并测试了其介电性能。讨论了Y3+和Mn2+离子共掺杂对Y5V特性的BCTZ系介质材料介电性能的影响。通过施主-受主掺杂,电容器的耐压升高,损耗降低,介电常数减小。并且,容量温度系数满足Z5U特性。Anti-reducing dielectric materials with Y5V characterization of BCTZ system were co-doped with donor ions (Y3+) and acceptor ions (Mn2+). Multilayer ceramic capacitors were prepared using these dielectrics, and their electrical properties were measured. The effects of co-doping with Y3+ and Mn2+ on the properties of the dielectrics were discussed. The breakdown voltage is increased and both the dissipation factor and the dielectric constant are decreased by donor-acceptor ions co-doping. The temperature coefficient of capacitance meets Z5U EIA specifications.

关 键 词：多层陶瓷电容器 镍内电极 抗还原电介质 掺杂 介电性能 

分 类 号：TM534.1[电气工程—电器]