纳米ZnO掺杂对压敏阀片电性能和组织的影响  

Influence of Nano ZnO on Electrical Properties and Microstructure of Varistor

作　　者：严群[1] 陈家钊[1] 涂铭旌[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《电子元件与材料》2004年第4期33-35,共3页Electronic Components And Materials

摘　　要：研究了纳米级ZnO粉料对压敏阀片的压敏电压、漏电流和压比的影响,并对其微观结构进行了分析研究,从理论上探讨了纳米ZnO影响压敏阀片电性能与微观结构的机理.研究结果表明,氧化锌压敏阀片中加入纳米ZnO后,其压敏电压显著提高.在质量分数为0～30%的范围内,随着纳米ZnO含量的增加,压敏阀片的压敏电压明显提高,其压比也呈升高趋势.当纳米ZnO含量为30%时,压敏电压约达547.54 V/mm,压比为1.149.在0～10%的范围内,随着纳米ZnO含量的增加,压敏阀片的漏电流呈下降趋势,而在10%～30%的时,漏电流又随纳米ZnO的含量的增加而升高.当纳米ZnO的含量为10%时,漏电流最小,为0.6μA.The effects of nano ZnO powder on voltage, leakage current, voltage ratio and microstructure of varistor were studied, and the mechanism of the effect was made from view of theoretical analysis. The results show that nano ZnO may improve the voltage and the varistor ratio of varistor increases with the inerease of nano ZnO content in the range of 0~30%. The voltage of the varistor reaches 547.54 V/mm and the voltage ratio reaches 1.149 when the nano ZnO content is 30%. The leakage current of varistor decreases with the increase of nano ZnO content in the range of 0~10%, and increases with the increase of nano ZnO content in the range of 10%~30%. The minimum leakage current of the varistor is of 0.6 A when the nano ZnO content is 10%. The microstructure analysis indicates that the nano additive may reduce ZnO grain size, which leads to the evident improvement of the voltage of varistor.

关 键 词：压敏阀片 纳米ZNO 电性能 微观结构 

分 类 号：TM283[一般工业技术—材料科学与工程]