活性屏离子氮化机理的研究  

An Investigation of Active Screen Plasma Nitriding

作　　者：赵程[1] 孙定国[1] 

机构地区：[1]青岛科技大学等离子体表面技术研究所,山东青岛266042

出　　处：《青岛科技大学学报（自然科学版）》2004年第1期43-47,共5页Journal of Qingdao University of Science and Technology:Natural Science Edition

摘　　要：在真空室内放置一个铁制的网状圆筒 ,并与直流高压电的负极相接 ,在直流电场的作用下 ,通过气体离子对圆筒的轰击溅射 ,产生了一些纳米数量级的活性粒子 ,利用这些高活性的纳米粒子簇可以对放置在圆筒内钢的表面进行氮化处理。实验证明 ,这些活性粒子是中性的Fe4N粒子 ,所以被处理的工件既可以处于悬浮电位 ,也可以处于零电位。活性屏离子氮化可以获得和普通直流离子氮化同样的处理效果 ,并解决了离子氮化技术的不足。An iron cage was installed in a vacuum chamber of plasma nitriding apparatus and the entire workload was surrounded by the cage. A high voltage cathodic potential is applied on the cage. Therefore, it is on the active screen, rather than on the component surface that the plasma forms. Since plasma is not formed on the component surface, many problems associated with the conventional DC plasma nitriding can be eliminated. Experimental results show that the active screen plasma nitriding can achieve similar nitriding effect to that of DC plasma nitriding. And the clusters sputtered from the active screen are neutral Fe 4N particles. Therefore, the worktable and the parts to be treated can be placed in a floating potential or zero potential.

关 键 词：活性屏 离子氮化 纳米离子 电位 

分 类 号：TG156.82[金属学及工艺—热处理]