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作 者:胡光辉[1] 吴辉煌[1] 杨防祖[1] 王森林[1]
机构地区:[1]厦门大学化学化工学院固体表面物理化学国家重点实验室,福建厦门361005
出 处:《电化学》2004年第1期94-97,共4页Journal of Electrochemistry
基 金:国家自然科学基金(20073035)资助
摘 要: 应用循环伏安和阻抗_电位法研究了硫脲(TU)对玻碳电极和镀镍玻碳电极上镍沉积过程的影响.结果表明,在玻碳电极上镍的电沉积呈现明显的电化学成核机理,而在镀镍玻碳电极上则无此特征.TU的存在虽阻碍了Ni晶核的形成,但却能加速晶粒的生长.Effect of thiourea on nickel deposition at glassy carbon and nickel-deposited glass carbon electrodes was investigated with cyclic voltammograms and impetance-potential curves. It was found that the nucleation processes occurred at the glassy carbon electrode. However, this characteristics disappeared at the nicked-deposited glassy carbon electrode. It was suggested that the presence of thiourea hindered the nucleation processes, yet accelerated grain growth.Curves of impetance-potential could sensitively detect effect of thiourea on nickel depositon and reflect changes in rate-determining step with potential.
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