溴碘化银T-颗粒晶体中的电子和空穴行为研究  

STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS

作　　者：曹立志[1] 庄思永[1] 

机构地区：[1]华东理工大学精细化工研究所,上海200237

出　　处：《感光科学与光化学》2004年第2期114-119,共6页Photographic Science and Photochemistry

基　　金：国家自然科学基金资助项目(20073013)

摘　　要：利用Wagner极化法研究了掺杂K4[Fe(CN)6]浅电子陷阱掺杂剂的溴碘化银T 颗粒晶体的电子电导率和空穴电导率,并与未掺杂的晶体样品进行对比,分别考察了实验温度、掺杂剂用量、掺杂位置等因素对实验结果的影响.结果表明,随掺杂剂用量的增加,晶体的电子电导率和空穴电导率都相应增加,这说明浅电子陷阱掺杂剂的掺杂有效地抑制了电子和空穴的复合.但其抑制作用却因掺杂位置的不同而不同,当掺杂量一定,掺杂剂掺在碘区附近时,晶体的电子电导率和空穴电导率的变化较明显.随着实验温度的增加,乳剂晶体的电子电导率和空穴电导率都下降.The electron conductivity and hole conductivity of the silver iodo-bromide T-grain crystal doped with K_4[Fe(CN)_6] was determined with Wagner polarization.The effects of the temperature,the doping amount and the doping place on the electron conductivity and the hole conductivity were studied.The results showed that with the increase of the doping amount,the electron conductivity and hole conductivity increased indicating that the shallow electron dopant could restrain the recombination of the electrons and the holes effectively.The restraint effects of the dopant varied with the doping region.When the doping amount was kept constant,if the doping place was near the iodide region,the changes of the electron conductivity and hole conductivity were more obvious than that in other places.With the increase of the temperature,the electron conductivity and hole conductivity decreased.

关 键 词：T-颗粒晶体 电子电导率 空穴电导率 浅电子陷阱掺杂剂 

分 类 号：O646[理学—物理化学]