高温闪烁晶体Ce:YAP的化学腐蚀形貌  

Etching Figures in High-temperature Scintillating Crystal Ce:YAP

作　　者：李红军[1] 赵广军[1] 曾雄辉[1] 钱振英[1] 郭聚平[1] 周圣明[1] 徐军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《人工晶体学报》2004年第1期123-125,共3页Journal of Synthetic Crystals

摘　　要：本文报导了Ce:YAP晶体位错蚀坑的腐蚀条件;同时报导了几个主要晶面的位错蚀坑形貌,(100)面呈扁豆形,(010)面呈菱形,(101)面呈椭圆形,这些形状与各自晶面的对称性一致。通过蚀坑形貌在晶体横截面内观察到了小面生长核心区和熔质尾迹等缺陷,并分析了其成因。The reasonable etching condition of dislocation in Ce:YAP was found out by a series of etching experiments. The typical etching figures of several main faces were reported. They show rhombus on (010) face, haricot-beam shape on (100) face and elliptic form on (101) face. The symmetry of an etch pit corresponds with the symmetry of a face on which the pit is created. The defects such as facet growth core and wake of melt were observed from etching figures on (101) face, and their causes of formation were analyzed.

关 键 词：Ce:YAP晶体 闪烁晶体 位错 腐蚀形貌 晶面 对称轴 对称性 

分 类 号：O772[理学—晶体学]