离子轰击对准直碳纳米管生长的影响  

Influence of Ion Bombardment on Growth of Aligned Carbon Nanotubes

作　　者：党纯[1] 王必本[2] 

机构地区：[1]淮阴工学院计算科学系,淮安223001 [2]北京工业大学应用数理学院,北京100022

出　　处：《人工晶体学报》2004年第1期126-129,共4页Journal of Synthetic Crystals

摘　　要：利用负偏压增强热丝化学气相沉积系统,在辉光放电的情况下制备出准直碳纳米管,并用扫描电子显微镜研究了不同负偏压对准直碳纳米管生长的影响。结果表明随着负偏压的增大,准直碳纳米管的平均直径减小,平均长度增大。由于辉光放电的产生,在衬底表面附近形成阴极鞘层,以及在阴极鞘层内形成大量的离子和在衬底表面附近形成很强的电场导致了离子对衬底表面的强烈轰击。最后,分析和讨论了离子的轰击对准直碳纳米管生长的影响。Aligned carbon nanotubes were prepared by negative bias-enhanced hot filament chemical vapor deposition system under glow discharge.It was investigated that different negative bias affects the growth of aligned carbon nanotubes. The results indicated that the average diameters of the aligned carbon nanotubes are reduced and the average length of the aligned carbon nanotubes is increased with the increase of the negative bias. Because of the occurrence of glow discharge, a cathode sheath is formed near the substrate surface, and a number of ions are produced in it and a very strong electrical field is built up near the substrate surface. As a result, the ions strongly bombard the substrate surface. Finally, it was analyzed and discussed that the ion bombardment effects on the growth of the aligned carbon nanotubes.

关 键 词：准直碳纳米管 离子轰击法 负偏压 气相沉积系统 辉光放电 阴极鞘层 

分 类 号：O782[理学—晶体学]