电子碰撞类锂硅离子直接和非直接电离速率系数  

lonization rate coefficients for Li-like Si including contributions due to innerrghell lonization and excitation-autoionization

作　　者：周忠源[1] 朱颀人[1] 潘守甫[1] 

机构地区：[1]吉林大学原子与分子物理研究所,长春市130023

出　　处：《中国激光》1992年第9期687-689,共3页Chinese Journal of Lasers

基　　金：国家教委博士点基金;中国原子和分子数据研究联合体基金资助

摘　　要：用库仑-玻恩交换近似以及由我们改进了屏蔽常数定义和算法的Z标度类氢模型,计算了类锂硅离子的内、外壳层电子的直接碰撞电离和非直接激发自电离的电离速率系数。The electron-impact ionization results for Li-like silicon including inner-shell ionization and exeitation-autoionization have been obtained by using Coulomb-Born-exchange approximation and Z-scaled hydrogenic model in which the definition and evaluation of the screening constant were improved.

关 键 词：电子 碰撞 锂硅离子 电离 速率系数 

分 类 号：TN2[电子电信—物理电子学]