超薄和超薄绒面Si太阳电池的1-MeV电子辐照特征  

Radiation characteristics of thin and textured thin Si solar cells irradiated by 1-MeV electrons

作　　者：艾尔肯[1] 郭旗[1] 任迪远[1] 余学峰[1] 陆妩[1] 严荣良[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《核技术》2004年第4期277-280,共4页Nuclear Techniques

摘　　要：对国产超薄背场Si太阳电池和超薄绒面背场Si太阳电池的电参数和光谱响应的1-MeV电子辐照损伤进行了研究。实验结果表明,超薄和超薄绒面背场Si太阳电池与常规背场Si太阳电池相比不但具备更好的抗辐射能力,而且电池电参数也有了明显提高。The radiation characteristics and spectral response of home-made thin back field and textured thin back field silicon solar cells irradiated by 1-MeV electrons have been studied. The results indicate that thin back field and textured thin back field silicon solar cells not only have more radiation resistance but also show better electrical characteristics compared with regular back field silicon solar cells.

关 键 词：太阳电池 电子辐照 辐射损伤 光谱响应 

分 类 号：TN304[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]