退火温度对KDP晶体光学均匀性的影响研究  

Study on improvement of the homogeneity of KDP crystals by annealing

作　　者：王圣来[1] 王波[1] 张光辉[1] 牛爱芹[2] 尹鑫[1] 高樟寿[1] 房昌水[1] 孙洵[1] 李义平[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东轻工业学院,山东济南250100

出　　处：《强激光与粒子束》2004年第4期437-440,共4页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题(59823003);山东大学青年科学基金资助课题

摘　　要：　研究了磷酸二氢钾(KDP)晶体热退火前后光学均匀性的变化,发现适当温度下退火可以降低KDP晶体的内应力,提高晶体的消光比,从而提高晶体的光学均匀性。实验证明,50℃下退火即可消除部分内应力,110℃下退火可以消除生长鬼影和鬼线。但是,退火温度太高(如170℃),也可能使晶体的均匀性降低。Potassium dihydrogen phosphate (KDP) crystals were baked at varied temperatures in the same procedure. Three kinds of interference techniques were used to investigate stress-induced birefringence in KDP crystals. It is found that the annealing temperature greatly affects the improvement of the homogeneity of KDP crystal. Obvious improvement of homogeneity of KDP crystal is found after annealing at 50°C. With the rise of the annealing temperature, the extinction ratio increases. Growth ghost disappeares after annealing at 110°C. The extinction ratio decreases when the crystals were annealed at very high temperature, such as 170°C.

关 键 词：热退火 KDP晶体 消光比 干涉 

分 类 号：TN24[电子电信—物理电子学]