高功率离子束在偏压电荷收集器内部的电荷输运模拟  

Simulation of HPIB propagation in biased charge collector

作　　者：李洪玉[1] 何小平[2] 孙剑锋[2] 杨海亮[2] 邱爱慈[1] 

机构地区：[1]西安交通大学电气工程学院,陕西西安710049 [2]西北核技术研究所,陕西西安710024

出　　处：《强激光与粒子束》2004年第4期535-539,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金资助课题(19975037);西北核技术研究所基金资助课题

摘　　要：　利用2.5维KARAT软件对高功率离子束在偏压电荷收集器内部的电荷输运过程进行PIC数值模拟,模拟结果表明在偏压电荷收集器内部电荷中和而电流不中和。在模拟中考虑了收集器的几何尺寸和离子束密度,因此模拟结果比一维数值计算的结果更为可靠。同时还模拟了偏置电压与电荷收集器离子收集效率之间的关系,对于峰值能量为500keV的高功率离子束,偏压为-800V即可满足测量要求,这一结果与实验吻合较好。A 2.5D PIC simulation using KARAT code for inner charge propagation within biased charge collector for measuring HPIB is presented. The simulation results indicate that the charges were neutralized but the current non-neutralized in the biased charge collector. The influence of ions collected vs biased voltage of the collector was also simulated. -800V biased voltage can meet the measurement of 500keV HPIB, and this is consistent with the experimental results.

关 键 词：高功率离子束 偏压电荷收集器 电荷输运 

分 类 号：TL506[核科学技术—核技术及应用]