Si_3N_4/Ti/Cu/Ti/Si_3N_4部分瞬间液相连接界面动力学  

Dynamic study in partial transient liquid phase bonding of Si_3N_4/Ti/Cu/Ti/Si_3N_4

作　　者：邹家生[1] 初雅杰[1] 翟建广[1] 陈铮[1] 

机构地区：[1]华东船舶工业学院焊接系,江苏镇江212003

出　　处：《焊接学报》2004年第2期43-46,51,共5页Transactions of The China Welding Institution

基　　金：江苏省自然科学基金项目(BK2001087)

摘　　要：采用Ti(5μm)/Cu(70μm)/Ti中间层,通过改变连接时间和连接温度进行Si3N4陶瓷的部分瞬间液相连接(PTLP连接),用扫描电镜、电子探针对连接界面区域进行了分析,系统地研究了Si3N4/Ti/Cu/Ti/Si3N4PTLP连接过程的动力学。结果表明,界面反应层的生长和等温凝固界面的迁移均符合扩散控制的抛物线方程。PTLP连接参数的优化不同于通常的活性钎焊和固相扩散连接的参数优化,反应层生长和液相区等温凝固这两个过程必须协调,才能同时提高室温和高温连接强度。Partial transient liquid phase bonding (PTLP bonding) of Si iN4 ceramic with Ti (5 μm) /Cu (70μm) /Ti multi-interlayer is performed by changing time and temperature. The joint interfaces are analyzed by SEM and EDX and the kinetics in PTLP bonding of SinN4 ceramic has been systematiclly studied. The results show that the growth of reaction layer and the transposition of isothemal solidification interface obey the parabolic law and are controlled by the diffusion of participating elements. It is pointed out that the optimization of the bonding parameters for the PTLP bonding of ceramics differs from that of conventional reactive brazing and the diffusion bonding. Both processes of the growth and the lio^iid phase isothermal solidification should be harmonized, in order to increase joint strength at room temperature and at high temperature simultaneously.

关 键 词：部分瞬间液相连接 等温凝固 反应层 动力学 SI3N4陶瓷 陶瓷/金属连接 

分 类 号：TG4[金属学及工艺—焊接]