隧道级联大功率半导体激光器热特性分析  

Thermal characterization of high -power laser diode cascaded by tunnel junction

作　　者：崔碧峰[1] 鲁鹏程[1] 郭伟玲[1] 李建军[1] 沈光地[1] 

机构地区：[1]北京工业大学电控学院,北京市光电子技术实验室,北京100022

出　　处：《科技通讯（上海）》2004年第1期87-89,共3页

基　　金：国家973基金资助项目(G20000683-02);北京市自然科学基金(4032007);国家863计划资助项目(2002AA312070)

摘　　要：基于光谱法,通过测量靠近衬底的有源区波长的变化来表征其温度的变化,计算了隧道级联多有源区大功率半导体激光器的热阻。与普通半导体激光器相比,随着有源区数目的增多该热阻有增大的趋势,但并没有成倍增加,主要原因是隧道级联半导体激光器的串连电阻没有成倍增加。Based on measuring the movement of l asing wavelength closed to the substrate while injected different duty cycle current,the mu ltiple active regions high -power la ser' s thermal resistance was calculated.Compared with traditio nal laser diodes,the novel laser' s thermal resistance increases with the number of active region.Bec ause the series resistance of novel dual -wavelength laser diodes is lower than the sum of two tradition al laser diodes series resistance,t he novel laser' s thermal resistance is also lower than the sum of two traditional laser diodes thermal resistance.

关 键 词：半导体激光器 热阻 隧道级联 双波长 光谱法 

分 类 号：TN248.4[电子电信—物理电子学]