电化学制备Ba_(1-x)Sr_xWO_4薄膜的工艺研究及分析表征  

Research on the deposition and characterization of Ba_(1-x)Sr_xWO_4 films prepared by electrochemical method

作　　者：毕剑[1] 肖定全[1] 高道江[1] 余萍[1] 朱建国[1] 陈连平[1] 杨祖念[1] 张文[1] 

机构地区：[1]四川大学材料科学与工程学院

出　　处：《功能材料》2004年第2期225-227,230,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)新材料技术领域的资助项目(2001 AA320201)

摘　　要：　采用恒电流技术直接在金属钨片上制备了白钨矿结构的Ba1-xSrxWO4晶态薄膜;讨论了电流密度、酸度、温度、电解液浓度等工艺条件对薄膜形成的影响。采用X射线衍射(XRD)分析了薄膜的晶相;扫描电镜(SEM)研究了薄膜的表面形貌;X射线光电子能谱(XPS)分析了薄膜的成分与价态。研究结果表明,通过控制上述工艺条件可以控制沉积薄膜的质量;在室温附近、较低的电流密度、pH值在12～13范围内时,能够制备出结晶良好、表面均匀的Ba1-xSrxWO4固溶体薄膜。Crystallized Ba_(1-x)Sr_xWO_4 thin films with a scheelite-structure were prepared on tungsten substrates by electrochemical method using constant direct current technique .The influence of processing conditions including current density, acidity, temperature, and concentration of acidity on the formation of Ba_(1-x)Sr_xWO_4 thin films was discussed. The characterizations of the deposited thin films using of XRD, SEM and XPS were carried out, and the effect of processing conditions on the thin films growth and the characterization results for the films were analyzed. The research results show that the properties of as-grown Ba_(1-x)Sr_xWO_4 thin films can be controlled by adjusting the processing conditions. The optimum preparation conditions for uniform and crystallized Ba_(1-x)Sr_xWO_4 thin films by electrochemical method are lower current density, suitable pH value (pH =12～13),and deposited at room temperature.

关 键 词：Ba1-xSrxWO4薄膜 电化学 制备 恒电流技术 XRD SEM XPS 光电功能材料 

分 类 号：TN204[电子电信—物理电子学]