钌基厚膜应变电阻力敏模型的初始讨论(英文)  

Inchoate Discussion of Ru-Based Thick Film Strain Resistor's Strain Sensitive Model

作　　者：丁鹏[1] 马以武[1] 

机构地区：[1]中国科学院合肥智能机械研究所,合肥230031

出　　处：《电子器件》2004年第1期63-65,82,共4页Chinese Journal of Electron Devices

基　　金：The project is supported by NSFC,granted.(NO.60175927,60374050)

摘　　要：通过分析钌基厚膜应变电阻的隧道势垒模型,提出力敏模型。用Bi_2O_3和RuO_2合成Bi_2Ru_2O_7并进行试验,发现应变系数随导电相粒径的增大而增大。用力敏模型解释了这一现象,并解释了其他力敏现象,诸如应变系数随势垒高度的增大而增大。We constructed a strain sensitive model through the analysis of the Ru-based thick film strain resistor's tunneling barrier model. Bi2Ru2O7 was synthesized with Bi2O3 and RuO2 . The gauge factor (GF) aggrandizes with the conductive particles radius' accretion. We interpreted this phenomenon through the strain sensitive model, and explained the other strain sensitive phenomenon, such as the GF mounts up with the barrier height' s augmention.

关 键 词：厚膜应变电阻 力阻模型 隧道势垒模型 

分 类 号：TN605[电子电信—电路与系统]