Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method  

作　　者：李宝霞 胡小华 朱洪亮 王宝军 赵玲娟 王圩 

机构地区：[1]National Center of Optoelectronics Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083 [2]National Center of Optoelectronics Technology,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Optics Letters》2004年第4期226-228,共3页中国光学快报（英文版）

基　　金：This work was supported by the National "973" Project of China (No. G20000683-1);the National "863" Project of China (No. 2001AA312050);the National Natural Science Foundation of China (No. 90101023).

摘　　要：An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser.The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW,and static extinction ratio of-7 dB at the applied bias voltage from 0.5 to -2.0 V.An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser.The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW,and static extinction ratio of-7 dB at the applied bias voltage from 0.5 to -2.0 V.

关 键 词：Electron absorption Modulators 

分 类 号：O439[机械工程—光学工程]