GaAs/Ge太阳电池抗电子辐射研究  

Study on anti-electron radiation of GaAs/Ge solar cells

作　　者：张新辉[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300381

出　　处：《电源技术》2004年第1期17-21,共5页Chinese Journal of Power Sources

摘　　要：锗砷化镓(GaAs/Ge)太阳电池抗电子辐射试验研究是高性能航天应用太阳能电源的基础研究项目。对这种电池进行了1×1013e/cm2 、1×1014e/cm2 、6×1014e/cm2 、1×1015e/cm2、1.69×1015e/cm2 等辐射总量的试验。在1×1015e/cm2辐射下,开路电压、短路电流和转换效率分别衰减了9.27%、11.25%和19.35%。电子辐射后,电池在长波长方光谱响应衰降较多,电池深能级瞬态谱分析表明带隙中引入了0.42 eV、0.43 eV的深能级。为提高电池的耐辐射性能,要改进电池制作工艺,提高电池各半导体层均匀性,减小电池结深和减小电池有效部分的厚度。Study on radiation resistance properties of GaAs/Ge solar cell was a basic research item in the field of high performance aerospace solar power sources. GaAs/Ge solar cellswere radiated with 1 MeV electrons for 1×1013 e/cm2 ?1×1014 e/cm2 ?6?014 e/cm2 ?1×1015 e/cm2 1.69×1015 e/cm2. After electron radiation with 1×1015 e/cm2, the open circuit voltage, short circuit current and efficiency reduced 9.27%?11.25% and 19.35% respectively. After electron radiation, decrease of optical response was more obviously in longer wavelength part, deep leveltransient spectroscopy analysis demonstrates that the deep level in 0.42 eV? 0.43 eV have been introduced to band gap. In order to raise electron irradiation resistance performance ofthe solar cells, it is necessary to improve manufacture process and layer homogeneity of solar cells , reduce junction depth and active layer thickness of solar cells.

关 键 词：GAAS/GE太阳电池 抗电子辐射 电池性能 光谱响应曲线 

分 类 号：TM914.4[电气工程—电力电子与电力传动]