聚喹啉/杂多阴离子杂化LB膜的制备与光电性质  

Preparation and Photoelectric Properties of Hybrid Polyquinolin/Heteropolyanion LB Films

作　　者：靳素荣[1] 柳士忠[2] 张联盟[1] 杜祖亮[3] 赵卫锋[1] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070 [2]湖北大学化学与材料学院,武汉430062 [3]河南大学固体表面实验室,开封475000

出　　处：《无机化学学报》2004年第5期621-624,共4页Chinese Journal of Inorganic Chemistry

基　　金：湖北省自然科学基金(No.2003ABA085)资助项目。

摘　　要：LB film of new hybrid Polyquinolin/Trilacunary heteropolytungstoilicate (PQ/SiW9) was prepared and characterized by π-A isotherm, UV-Vis absorption spectroscopy, atomic force microscope(AFM), fluorescence spectroscopy. The results indicated that they had good film-forming property on the air-water interface. The molecular areas for these monolayers at zero pressure were estimated to be 7.2 nm2·mol-1. The collapse pressure of LB film was 46 mN·m-1. Their I^V curves results showed that the title LB films had good electric conductivity and the conductivity of the LB film increased with monolayers number.LB film of new hybrid Polyquinolin/Trilacunary heteropolytungstoilicate (PQ/SiW9) was prepared and characterized by pi-A isotherm, UV-Vis absorption spectroscopy, atomic force microscope (AFM), fluorescence spectroscopy. The results indicated that they had good film-forming property on the air-water interface. The molecular areas for these monolayers at zero pressure were estimated to be 7.2 nm(2 .) mol(-1). The collapse pressure of LB film was 46 mN (.) m(-1). Their lsimilar toV curves results showed that the title LB films had good electric conductivity and the conductivity of the LB film increased with monolayers number.

关 键 词：聚喹啉/杂多阴离子杂化LB膜 制备 光电性质 三缺位钨硅杂多化合物 成膜性 有机/无机杂化LB膜 

分 类 号：O484.4[理学—固体物理] TB33[理学—物理]