聚硅烷导电性能及氧化掺杂  

Conductivity and oxidative doping of polysilane

作　　者：徐冰[1] 雷艳秋[1] 于逢源[1] 黄世强[1] 

机构地区：[1]湖北大学化学与材料科学学院,武汉430062

出　　处：《化工新型材料》2004年第4期5-9,共5页New Chemical Materials

摘　　要：介绍了聚硅烷导电材料的国内外研究进展 ,侧重阐述了聚硅烷的中性半导体行为及其独特的σ电子的离域性 ;并简单介绍了提高聚硅烷导电性能的不同掺杂手段 ,着重叙述了聚硅烷氧化掺杂导电的机理及影响其掺杂功效的几个重要因素 。The study progress of conductive materials of polysilane was introduced The semiconductor behavior and σ electron delocalization of polysilane were described This review aims at highlighting doping methods about improving the conductivity of polysilane, conductive mechanism of oxidative doping and important factors of doping efficiency as well as the outlook on development direction of this field.

关 键 词：聚硅烷 导电性能 离域性 硅原子 电导率 掺杂剂 化学结构 

分 类 号：O634[理学—高分子化学]