Device Characteristics Comparison Between GaAs Single and Double Delta-Doped Pseudomorphic High Electron Mobility Transistors  

双平面掺杂和单平面掺杂 PHEMT器件的性能比较(英文)

作　　者：陈震[1] 郑英奎[1] 刘新宇[1] 和致经[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2004年第3期247-251,共5页半导体学报（英文版）

摘　　要：The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double delta doped design,the DH-PHEMT can enhance the carrier confinement,increase the electron gas density,and improve the electron gas distribution,which is beneficial to the device performance.A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.These improvements suggest that DH-PHEMT is more suitable for high linearity applications in microwave power device.研制了 Al0 .2 4 Ga0 .76 As/ In0 .2 2 Ga0 .78As单平面掺杂 PHEMT器件 (SH - PHEMT)和双平面掺杂 PHEMT器件(DH- PHEMT) ,并对其特性进行了比较 .由于采用了双异质结、双平面掺杂的设计 ,DH- PHEMT能将载流子更好地限制在沟道中 ,得到更大的二维电子气浓度和更均匀的二维电子气分布 ,这些都有利于提高器件的性能 .因此 ,DH- PHEMT器件具有更好的线性度 ,在较大的栅压范围内具有高的跨导和更大的电流驱动能力 .这说明 DH-PHEMT器件更加适用于高线性度应用的微波功率器件 .

关 键 词：pseudomorphic high electron mobility transistor(PHEMT) delta dope LINEARITY 

分 类 号：TN61[电子电信—电路与系统]