多孔硅衬底微波CVD金刚石薄膜的制备及其场电子发射  

Preparation and Field Electron Emission of Diamond Films on Porous Silicon Substrates with MW-CVD Technique

作　　者：陈光华[1] 蔡让岐[2] 宋雪梅[1] 贺德衍[2] 

机构地区：[1]北京工业大学新型功能材料教育部重点实验室,北京100022 [2]兰州大学物理科学与技术学院,兰州730000

出　　处：《Journal of Semiconductors》2004年第3期288-291,共4页半导体学报（英文版）

摘　　要：研究了多孔硅衬底微波 CVD金刚石薄膜的制备工艺及其场电子发射特性 .以多孔硅作为生长金刚石突起阵列的模板 ,生长出带多微尖的微晶金刚石晶粒 ,使场电子发射阈值下降 (<1V/ μm) ,发射电流增大 (>90 m A/ cm2 ) ,场发射性能稳定 ,并对这种场发射特性做出了理论解释 .Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied.Microcrystalline diamond particles with multi-microtips are deposited on porous silicon templates and formed an nanocrystalline diamond protuberance array,which results in reduced (<1V/μm) field electron emission threshold and increased (>90mA/cm2) emission current.Therefore nanocrystalline diamond films have a fine stability of field emission.A possible theoretical explanation to the characteristic of field emission is discussed.

关 键 词：多孔硅 金刚石薄膜 场电子发射 

分 类 号：TN304.05[电子电信—物理电子学]