CdS薄膜的SILAR法制备与表征  

Preparation of CdS Thin Films by SILAR Method

作　　者：刘晓新[1] 靳正国[1] 步绍静[1] 赵娟[1] 程志捷[1] 

机构地区：[1]天津大学材料学院先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《无机材料学报》2004年第3期691-695,共5页Journal of Inorganic Materials

基　　金：天津市重点基础研究项目(F103004)

摘　　要：采用液相薄膜制备工艺-SILAR(连续离子层吸附反应)法,在室温下于玻璃衬底上制备了CdS薄膜.对薄膜的表面形貌,薄膜的生长速率以及热处理与薄膜的成相及其电阻率的关系进行了观察和分析.实验结果表明:薄膜表面较致密,生长速率为2nm/cycle,随循环次数的增加,沉积粒子的尺寸趋于增大.室温下沉积的CdS薄膜为非晶态,经热处理后薄膜的结晶度提高,电阻率显著下降.此外,文章结合实验对薄膜的生长机理进行了初步的讨论.The SILAR method was applied to prepare cadmium sulfide thin films on a glass substrate at room temperature. The growth rate and surface morphology of the films with cycle times were characterized. The effect of annealing on crystal structure and resistivity of the films was studied. In addition, the growth mechanism of heterogeneous reaction of the thin film was discussed. The results show that the film as-deposited is amorphous and compact, the growth rate is about 2nm/cycle and the size of the particles is increased from 60nm to 100nm with the increase of the cycle times. The crystallinity is increased and the resistivity is decreased with the increase of annealing temperature from RT to 673K.

关 键 词：CDS薄膜 SILAR法 制备与表征 生长机理 

分 类 号：TN304[电子电信—物理电子学]