Indications of c-axis Charge Transport in Hole Doped Triangular Antiferromagnets  

作　　者：LIANGYing LIUBin FENGShi-Ping 

机构地区：[1]DepartmentofPhysics,BeijingNormalUniversity,Beijing100875,China [2]DepartmentofPhysicsandKeyLaboratoryofBeamTechnologyandMaterialModification,BeijingNormalUniversity,Beijing100875,China

出　　处：《Communications in Theoretical Physics》2004年第4期614-618,共5页理论物理通讯（英文版）

基　　金：国家自然科学基金

摘　　要：The c-axis charge transport of the hole doped triangular antiferromagnet is investigated within the t-J model by considering the incoherent interlayer hopping. It is shown that the c-axis charge transport of the hole doped triangular antiferromagnet is essentially determined by the scattering from the in-plane fluctuation. The c-axis conductivity spectrum shows a low-energy peak and the unusual high-energy broad band, while the c-axis resistivity is characterized by a crossover from the high temperature metallic-like behavior to the low temperature insulating-like behavior, which is qualitatively consistent with those of the hole doped square lattice antiferromagnet.

关 键 词：c-axis charge transport triangular lattice t-J model 

分 类 号：TM271[一般工业技术—材料科学与工程]