As^+/N_2^+组合离子注入Si的损伤退火及杂质浓度分布  

Damage Annealing and Impurity Density Distribution of As^+/N_2^+ Co-Implantation Si

作　　者：韩宇[1] 肖鸿飞[2] 高雅君[1] 马德录[1] 

机构地区：[1]辽宁大学物理系原子与辐射研究所,沈阳110036 [2]沈阳大学物理系,沈阳110036

出　　处：《Journal of Semiconductors》2004年第4期394-399,共6页半导体学报（英文版）

基　　金：辽宁省教委 ( No.2 0 2 10 0 12 79);沈阳市科委 ( No.10 2 2 0 3 7-1-0 6)资助项目~~

摘　　要：采用双晶 X射线衍射仪测量了相同注入能量、不同注入剂量的 As+ / N2 + 组合离子注入 Si的衍射曲线 ,借助X射线衍射的运动学理论和离子注入的多层模型 ,对衍射曲线进行拟合 ,得到了晶格应变随注入深度的分布及辐射损伤分布 .在 5 0 0～ 90 0℃下进行等时热退火 ,对辐射损伤经退火的晶格恢复进行了研究 .用 L SS理论计算了同样注入条件下的杂质浓度分布 。The rocking curves of As +/N 2 + co-implanted Si with the same implanted energy,the different implanted doses,and the different annealing temperature are obtained by the X-ray double-crystal diffraction instrument.The rocking curves are simulated by kinematical theory of X-ray diffraction and multiplayer model.The lattice strain distributions as a function of depth at the different implanted doses and the different annealing temperature are given.Thus the radial damage distribution is given.The samples are annealed at 500～900℃ during the same time and the regain behaviors of the lattice damage by annealing are researched.In order to obtain the mechanism and the law,the impurity density distribution of the samples implanted at the same condition is calculated.The lattice strain distribution is compared with the impurity density distribution.

关 键 词：组合离子注入 双晶X射线衍射 晶格应变 退火 杂质浓度 

分 类 号：TN304[电子电信—物理电子学]