Violet／blue photoluminescence from CeO2 thin film  

作　　者：CHAIChunlin YANGShaoyan LIUZhikai LIAOMeiyong CHENNuofu 

机构地区：KeyLaboratoryofSemiconductorMaterialScience,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China

出　　处：《Chinese Science Bulletin》2003年第2期1198-1200,共3页

基　　金：国家重点基础研究发展计划(973计划)，国家自然科学基金

摘　　要：CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thin film. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to the electrons transition from Ce4f band to O2p band and the defect level to O2p band. And these defects levels were located in the range of 1 eV around Ce4f band.CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thinfilm. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to theelectrons transition from Ce4f band to O2p band and thedefect level to O2p band. And these defects levels were lo-cated in the range of 1 eV around Ce4f band.

关 键 词：二氧化铈薄膜 XPS 电子转移 绝缘体材料 PL 蓝色光致发光 紫色光致发光 晶体结构 

分 类 号：TN304.21[电子电信—物理电子学] TN383.2