2.4GHz0.25μmCMOS集成低噪声放大器的设计  

Design of 2.4GHz 0.25μm CMOS integrated low noise amplifier

作　　者：詹福春[1] 王文骐[1] 李长生[1] 

机构地区：[1]上海大学通信学院电子信息工程系,上海200072

出　　处：《半导体技术》2004年第5期81-85,共5页Semiconductor Technology

基　　金：上海市科委PDC专项资助计划资助项目(017015030)

摘　　要：采用TSMC 0.25mm CMOS工艺,设计了单端和差分两种工作在2.4GHz可应用于蓝牙的全集成低噪声放大器。详述了设计过程并给出了优化仿真结果。经比较得出,差分低噪声放大器为了取得和单端低噪声放大几乎同样的性能,要消耗双倍的功耗和面积,但因其对共模信号干扰的免疫力以及对衬底耦合的抑制作用而越来越受到青睐。Two 2.4GHz integrated low noise amplifiers(LNA) available to bluetooth, one of whichis single-ended and the other is differential, have been designed in TSMC 0.25μm CMOS process.Compared with the single-ended LNA, the differential LNA consumes double power and chip dies inorder to obtain the nearly same performance, but nevertheless it is more and more preferred becauseof its immunity to common-mode signal interference and rejection to substrate coupling.

关 键 词：CMOS 单端低噪声放大器 差分低噪声放大器 射频集成电路 无线通信 射频接收机 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN85