环境压力对硅纳米线及硅微米晶须生长的影响  

Effects of ambient pressure on the growth of silicon nanowire and silicon micron whiskers

作　　者：于灵敏[1] 范新会[1] 刘春霞[1] 严文[1] 

机构地区：[1]西安工业学院材料与化工学院,陕西西安710032

出　　处：《西安工业学院学报》2004年第1期61-64,81,共5页Journal of Xi'an Institute of Technology

基　　金：陕西省自然科学基金 (2 0 0 1C56 )

摘　　要：　用物理热蒸发法在不同环境压力下制备硅纳米线和硅微米晶须.借助扫描电子显微镜、X射线能谱分析和透射电子显微镜对不同环境压力下的硅纳米线及硅微米晶须的形貌、化学成分和晶体结构进行分析.研究了环境压力对硅纳米线和硅微米晶须生长的影响.结果表明:平行排列的硅纳米线和硅微米晶须生长的环境压力为13.3kPa;环境压力不但对硅纳米线和硅微米晶须直径产生影响,而且对其生长方向性有一定影响;硅微米晶须杆部出现等距离分布单晶硅颗粒,这是在高温退火过程中发生的球化作用所致.Silicon nanowires and silicon micron whiskers have been prepared by thermal evaporation at different ambient pressures. To study the effects of ambient pressure on the growth of silicon nanowire and whisker, the morphology of them at different ambient pressure has been carried out by scanning electron microscope, the chemical composition and structure are characterized by energy disperse x-ray spectroscopy connected to Scanning Electron Microscope and transmission electron microscope. The results show that: the highly aligned silicon nanowires and whiskers have been synthesized at 13.3kPa; Not only the diameters but also the alignments of the silicon nanowires and whiskers are affected by the ambient pressure; Single crystal silicon grain distributed equidistantly among the silicon whisker bar, it is the reason that spheroidizing takes place.

关 键 词：环境压力 硅纳米线 硅微米晶须 方向性 热蒸发法 晶体生长 

分 类 号：TB383[一般工业技术—材料科学与工程] O78[理学—晶体学]