氮离子注入后拟南芥种子表皮的扫描电镜观察  

SEM observation of the Arabidopsis thaliana seed's surface cell implanted by keV N^+ ion beam

作　　者：王卫东[1] 王燕[1] 王雪青[1] 秦广雍[1] 霍裕平[1] 

机构地区：[1]郑州大学离子束生物工程省重点实验室,河南郑州450052

出　　处：《电子显微学报》2004年第2期148-151,共4页Journal of Chinese Electron Microscopy Society

基　　金：国家"十五"科技攻关项目资助(No.2001BA302B 03).

摘　　要：应用扫描电镜观察了低能N+注入拟南芥干种子后表层细胞结构的变化。结果表明,拟南芥种子的N+离子注入区域与未注入区域相比,离子注入区在一定程度上发生变化并伴随有表层细胞的损伤。随着离子剂量的增大,离子对种子细胞的损伤程度增大,且种子表面有裂痕生成。另外,经注入种子的表面分布有许多散在的固体颗粒状物质,其密集程度也随离子剂量的增加而增大。The changes of surface cell structure on the Arabidopsis thaliana 　seeds were observed by SEM. It showed that, in some degree, the fields which were implanted by low energy N^+ were different from those were not implanted, and some surface cells were impaired. The more large dose of the ion beam, the more hard injury of the cells. When dose of the ion beam was large enough, there would be rifts in the surface of Arabidopsis thaliana seed. And moreover, there were many solid granules on the surface of the seeds. The degree of its denseness became denser when the dose increased.

关 键 词：氮离子注入 扫描电子显微镜 拟南芥种子 细胞结构 辐射剂量 

分 类 号：Q944[生物学—植物学]